An SVM-Based NAND Flash Endurance Prediction Method
نویسندگان
چکیده
منابع مشابه
Wear unleveling: improving NAND flash lifetime by balancing page endurance
Flash memory cells typically undergo a few thousand Program/Erase (P/E) cycles before they wear out. However, the programming strategy of flash devices and process variations cause some flash cells to wear out significantly faster than others. This paper studies this variability on two commercial devices, acknowledges its unavoidability, figures out how to identify the weakest cells, and introd...
متن کامل3D NAND Flash Based on Planar Cells
In this article, the transition from 2D NAND to 3D NAND is first addressed, and the various 3D NAND architectures are compared. The article carries out a comparison of 3D NAND architectures that are based on a “punch-and-plug” process—with gate-all-around (GAA) cell devices—against architectures that are based on planar cell devices. The differences and similarities between the two classes of a...
متن کاملNAND Flash Design Trends
die and beyond with MLC (two bit per cell) technology with 50nm and 40nm process nodes. Despite this impressive growth of bit density, program performance of NAND Flash has remained in 10MB/s range. As consumer’s need for more digital contents grows, companies are paying more attention to improve program and read performance of NAND Flash devices to meet the consumer’s appetite for more bits an...
متن کاملPage overwriting method for performance improvement of NAND flash memories
This paper presents a novel page overwriting scheme for NAND flash memory. It provides significantly improved in-place page update with minimum hardware overhead. It does not require valid page copy for erase operation in order to modify data in a written page. Experimental results show 3.3 ∼ 47.5 times faster page update time with one overwrite allowance and 1.3 ∼ 18.7 with four overwrites all...
متن کاملMultipage Read for nand Flash
NAND flash memories achieve very high densities through a series connection of all the cells in a bitline. In current memories, each wordline is read independently by biasing all the other cells to act as pass transistors and sensing all the bitlines in parallel. This paper proposes a new method which reads multiple wordlines simultaneously and returns a combination of their stored information....
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Micromachines
سال: 2021
ISSN: 2072-666X
DOI: 10.3390/mi12070746